PHYSICS OF ELECTRONIC DEVICES (BEE306D)

PHYSICS OF ELECTRONIC DEVICES

Course Code BEE306D 
CIE Marks 50
Teaching Hours/Week (L:T:P: S) 3:0:0:0 
SEE Marks 50
Total Hours of Pedagogy 40 Hours Theory 
Total Marks 100
Credits 03 
Exam Hours 03
Examination nature (SEE) Theory

Module-1

Semiconductors Bonding forces in solids, energy bands, metals, semiconductors and insulators, direct and indirect semiconductors, electrons and holes, intrinsic and extrinsic materials, conductivity and mobility, drift and resistance, effects of temperature and doping on mobility, Hall effect Text:1) 3.1.1 to 3.1.4, 3.2.1 to 3.2.4, 3.4.1 to 3.4.5 

Module-2

P-N JUNCTIONS: Forward and reverse bias junctions, Qualitative description of current flow at a junction, reverse bias and reverse bias breakdown, Zener breakdown, avalanche breakdown, Thermal runaway. Text 1)5.3.1 to 5.3.3, 5.4, 5.4.1 to 5.4.3 Optoelectronic Devices: Photo diodes, current and voltage in illuminated junction, solar cells, photo detectors, light emitting diode, light emitting materials Text 1)8.1.1 to 8.1.3, 8.2, 8.2.1 

Module-3

Bipolar Junction Transistor: Fundamentals of BJT operation, amplification with BJTs, BJT fabrication, the Coupled diode model (Ebers –Moll Model), switching operation of transistor, cutoff, saturation, switching cycle, specifications, drift in the base region, base narrowing, avalanche breakdown. Text 1)7.1 to 7.3, 7.5.1, 7.6, 7.7.1 to 7.7.3 14.08.2023 14.08.2023

Module-4

Field Effect Transistors: Basic PN JFET operation, equivalent circuit and frequency limitation, MOSFET two terminal MOS structure, energy band diagram, ideal capacitance voltage characteristics and frequency effects, basic MOSFET operation, MOSFET structure, current-voltage characteristics Text 2)9.1.1, 9.4, 9.6.1 - 9.6.2, 9.7.1-9.7.2, 9.8.1-9.8.2 

Module-5

Fabrication of PN junction: Thermal oxidation, diffusion, rapid thermal processing, Ion implantation, chemical vapour deposition, photolithography, etching, metallization (Text 1)5.1 Integrated Circuits: Background, evolution of ICs, CMOS process integration, integration of other circuit elements (Text 1)9.1-9.2, 9.3.1, 9.3.3.

Suggested Learning Resources: Text Books: 

1)Ben. G. Streetman, Sanjay Kumar Banerjee, “Solid State Electronic Devices”, 7th Edition, Pearson Education 2016, ISBN 978-93-325-5508-2 

2)Donald A Neamen, Dhrubes Biswas, “Semiconductor physics and Devices”, 4th Edition, MC Graw Hill Education 2012, ISBN 978-0-07-107010-2 

Reference Books: 

1)S.M. Sze, Kwok K Ng, “Physics of semiconductor devices”, 3rd edition, Wiley 2018. 2)Adir Bar-Lev, “Semiconductor and electronic devices”, 3rd Edition , PHI, 1993.