SEMICONDUCTOR DEVICES (BEE654D)

SEMICONDUCTOR DEVICES

Course Code BEE654D 
CIE Marks 50
Teaching Hours/Week (L:T:P: S) 3:0:0:0 
SEE Marks 50
Total Hours of Pedagogy 40 
Total Marks 100
Credits 03 
Exam Hours 03
Examination nature (SEE) Theory

Module-1

Power Electronics: Introduction, Converter Classification, Power Electronics Concepts, Electronic Switches, Switch Selection, Spice, PSpice and Capture, Representation of switches in Pspice -The Voltage-Controlled Switch, Transistors, Diodes and Thyristors (SCRs).

Power Computations: Introduction, Power and Energy, Inductors and Capacitors, Energy Recovery, Effective Values, Apparent Power and Power Factor, Power Computations for Sinusoidal AC Circuits, Power Computations for Nonsinusoidal Periodic Waveforms, Power Computations Using Pspice.

Basic Semiconductor Physics: Introduction, Conduction Processes in Semiconductors pn Junctions, Charge Control Description of pn-Junction Operation, Avalanche Breakdown

Module-2

Power Diodes: Introduction, Basic Structure and I – V characteristics, Breakdown Voltage Considerations, On –State Losses, Switching Characteristics, Schottky Diodes.

Bipolar Junction Transistors: Introduction, Vertical Power Transistor Structures, Z-V Characteristics, Physics of BJT Operation, Switching Characteristics, Breakdown Voltages, Second Breakdown, On-State Losses, Safe Operating areas.

Power MOSFETs : Introduction, Basic Structure, I-V Characteristics, Physics of Device Operation, Switching Characteristics, Operating Limitations and Safe Operating Areas

Module-3

Thyristors: Introduction, Basic Structure, I-V Characteristics, Physics of Device Operation, Switching Characteristics, Methods of Improving di/dt and dv/dt Ratings.

Gate Turn-Off Thyristors: Introduction, Basic Structure and Z-V Characteristics, Physics of Turn-Off Operation, GTO Switching Characteristics, Overcurrent Protection of GTOs.

Insulated Gate Bipolar Transistors: Introduction, Basic Structure, I-V Characteristics, Physics of Device Operation, Latchup in IGBTs, Switching Characteristics, Device Limits and SOAs.

Emerging Devices and Circuits: Introduction, Power Junction Field Effect Transistors, Field-Controlled Thyristor, JFET-Based Devices versus Other Power Devices, MOS-Controlled Thyristors, Power Integrated Circuits, New Semiconductor Materials for Power Devices

Module-4

Snubber Circuits: Function and Types of Snubber Circuits, Diode Snubbers, Snubber Circuits for Thyristors, Need for Snubbers with Transistors, Turn-Off Snubber, Overvoltage Snubber, Turn-On Snubber, Snubbers for Bridge Circuit Configurations, GTO Snubber Considerations.

Gate and Base Drive Circuits: Preliminary Design Considerations, dc-Coupled Drive Circuits, Electrically Isolated Drive Circuits, Cascode-Connected Drive Circuits, Thyristor Drive Circuits, Power Device Protection in Drive Circuits, Circuit Layout Considerations

Module-5

Component Temperature Control and Heat Sinks: Control of Semiconductor Device Temperatures, Heat Transfer by Conduction, Heat sinks, Heat Transfer by Radiation and Convection.

Design of Magnetic Components: Magnetic Materials and Cores, Copper Windings, Thermal Considerations, Analysis of a Specific Inductor Design, Inductor Design Procedures, Analysis of a Specific Transformer Design, Eddy Currents, Transformer Leakage Inductance, Transformer Design Procedure, Comparison of Transformer and Inductor Sizes

Suggested Learning Resources:

Books

1. Power Electronics, Daniel W Hart, McGraw Hill.

2. Power Electronics Converters, Applications, and Design, Ned Mohan et al, Wiley, 3rd Edition, 2014.

3. Semiconductor Device Modeling with Spice, G. Massobrio, P. Antognetti, McGraw-Hill, 2nd Edition, 2010.

4. Power Semiconductor Devices, B. JayantBaliga, Springer, 2008.

5. Power Electronics Principles and Applications, Joseph Vithayathil, McGraw-Hill, 2011.