Electronic Devices (BEC306A)

Electronic Devices

Course Code BEC306A 
CIE Marks 50
Teaching Hours/Week (L:T:P: S) 3:0:0 
SEE Marks 50
Total Hours of Pedagogy 40 
Total Marks 100
Credits 03 
Exam Hours 3
Examination type (SEE) Theory

Module-1

Semiconductors Bonding forces in solids, Energy bands, Metals, Semiconductors and Insulators, Direct and Indirect semiconductors, Electrons and Holes, Intrinsic and Extrinsic materials, Conductivity and Mobility, Drift and Resistance, Effects of temperature and doping on mobility, Hall Effect. (Text1:3.1.1,3.1.2,3.1.3,3.1.4,3.2.1,3.2.3,3.2.4,3.4.1,3.4.2,3.4.3,3.4.5).

Module-2

PN Junctions Forward and Reverse biased junctions-Qualitative description of Current flow at a junction, reverse bias, Reverse bias breakdown- Zener breakdown, avalanche breakdown, Rectifiers.(Text1:5.3.1,5.3.3,5.4,5.4.1,5.4.2,5.4.3) Optoelectronic Devices Photodiodes: Current and Voltage in an Illuminated Junction, Solar Cells, Photodetectors. Light Emitting Diode: Light Emitting materials. (Text1:8.1.1,8.1.2,8.1.3,8.2,8.2.1),

Module-3

Bipolar Junction Transistor Fundamentals of BJT operation, Amplification with BJTS,BJT Fabrication, The coupled Diode model(Ebers-Moll Model),Switching operation of a transistor, Cutoff, saturation, switching cycle, specifications, Drift in the base region, Base narrowing, Avalanche breakdown. (Text1:7.1,7.2,7.3,7.5.1,7.6,7.7.1,7.7.2, 7.7.3) 

Module-4

Field Effect Transistors Basic pn JFET Operation, Equivalent Circuit and Frequency Limitations, MOSFET-Two terminal MO SstructureEnergy band diagram, Ideal Capacitance -Voltage Characteristics and Frequency Effects, Basic MOSFET Operation- MOSFET structure, Current-Voltage Characteristics. (Text2:9.1.1,9.4,9.6.1,9.6.2,9.7.1,9.7.2,9.8.1,9.8.2). 

Module-5

Fabrication of p-n junctions Thermal Oxidation, Diffusion, Rapid Thermal Processing, Ion implantation, chemical vapour deposition, photolithography, Etching, metallization. (Text 1: 5.1) Integrated Circuits Background, Evolution of ICs, CMOS Process Integration, Integration of Other Circuit Elements.(Text 1:9.1,9.2,9.3.1,9.3.3).

Suggested Learning Resources: Books 

1. Ben. G. Streetman, Sanjay Kumar Banerjee, "Solid State Electronic Devices",7 thEdition,Pearson Education,2016,ISBN978-93-325-5508-2. 

2. Donald A Neamen, Dhrubes Biswas, "Semiconductor Physics and Devices", 4 thEdition,McGraw Hill Education, 2012,ISBN 978-0-07- 107010-2. 

ReferenceBooks: 

3. S.M.Sze,KwokK.Ng,"PhysicsofSemiconductorDevices",3 rdEdition, Wiley,2018. 4. AdirBar-Lev,"SemiconductorandElectronicDevices",3 rdEdition,PHI, 1993